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Performance Enhancement in N~2~ Plasma Modified AlGaN/AlN/GaN MOS-HEMT Using HfAlO~X~ Gate Dielectric with Γ-Shaped Gate Engineering by Yang, Shun-Kai (author);Mazumder, Soumen (author);Wu, Zhan-Gao (author);Wang, Yeong-Her (author) is a Engineering article available to read on EtoBox.

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In this paper, we have demonstrated the optimized device performance in the Γ-shaped gate AlGaN/AlN/GaN metal oxide semiconductor high electron mobility transistor (MOS-HEMT) by incorporating aluminum into atomic layer deposited (ALD) HfO2 and comparing it with the commonly used HfO2 gate dielectric with the N2 surface plasma treatment. The inclusion of Al in the HfO2 increased the crystalline temperature (~1000 °C) of hafnium aluminate (HfAlOX) and kept the material in the amorphous stage even at very high annealing temperature (>800 °C), which subsequently improved the device performance. The gate leakage current (IG) was significantly reduced with the increasing post deposition annealing (PDA) temperature from 300 to 600 °C in HfAlOX-based MOS-HEMT, compared to the HfO2-based device. In comparison with HfO2 gate dielectric, the interface state density (Dit) can be reduced significantly using HfAlOX due to the effective passivation of the dangling bond. The greater band offset of the HfAlOX than HfO2 reduces the tunneling current through the gate dielectric at room temperature (RT), which resulted in the lower IG in Γ-gate HfAlOX MOS-HEMT. Moreover, IG was reduced more than one o

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Author

Yang, Shun-Kai (author);Mazumder, Soumen (author);Wu, Zhan-Gao (author);Wang, Yeong-Her (author)

Publisher

MDPI AG

Published

2021

Language

EN

Field

Engineering (Physical Sciences)