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High-Power GaN ICs for 800V Data Centers by yangdk2017 is a document available to read on EtoBox.

What is High-Power GaN ICs for 800V Data Centers about?

The document discusses high-power GaN integrated circuits and FETs designed for next-generation 800V AI data centers, highlighting their efficiency and architecture. It outlines various power architectures, including modular and centralized systems, and presents the advantages of 800V HVDC solutions. Additionally, it details specific products and evaluation boards developed by Navitas Semiconductor, emphasizing their high power density and efficiency metrics.

Author

yangdk2017

Language

EN