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What is Stringer Gate FinFET On Bulk Substrate about?

The paper presents a novel stringer gate FinFET structure that effectively suppresses subthreshold leakage in bulk FinFETs by modifying the gate etch process, resulting in a 35% reduction in OFF-state leakage current with only a 5% increase in parasitic capacitance. This approach eliminates the need for a retrograde well process, addressing the statistical variability issues associated with high doping concentrations. The stringer gate enhances subthreshold slope and reduces drain-induced barrier lowering,

Author

rafia zaidi

Language

EN