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About this Engineering article
High-speed, high-current-gain p-n-p InP/InGaAs heterojunction bipolar transistors by Lunardi, L.M.; Chandrasekhar, S.; Hamm, R.A. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Lunardi, L.M.; Chandrasekhar, S.; Hamm, R.A.
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0741-3106)
- Published
- 1993
- Field
- Engineering (Physical Sciences)
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