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Development of rugged 2 GHz power bars delivering more than 100 W and 60% power added efficiency by P. Waltereit; W. Bronner; R. Quay; M. Dammann; S. Müller; K. Köhler; M. Mikulla; O. Ambacher; L. Harm; M. Lorenzini; T. Rödle; K. Riepe; K. Bellmann; C. Buchheim; R. Goldhahn is a Engineering article available to read on EtoBox.

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## Abstract In this work we systematically study the structural, optical and electrical properties of AlGaN/GaN heterostructures grown by MOCVD 3‐inch on SiC substrates The finally developed HEMTs demonstrate excellent high‐voltage stability, high power performance and large power added efficiencies. For a drain bias of 100 V an output‐power‐density around 26 W/mm with 25 dB linear gain is obtained. On 36 mm gate width devices an output power beyond 100 W is achieved with a power added efficiency above 60% and a linear gain around 17 dB. Ruggedness on these large devices is proven by successfully passing harsh intentional device mismatch tests during operation at 50 V. Reliability is tested at a drain bias of 50 V. Under DC conditions a drain‐current degradation below 20% after 20 years is extrapolated. Under RF stress the observed change in output power is well below 0.1 dB after a test duration of more than 500 h. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Author

P. Waltereit; W. Bronner; R. Quay; M. Dammann; S. Müller; K. Köhler; M. Mikulla; O. Ambacher; L. Harm; M. Lorenzini; T. Rödle; K. Riepe; K. Bellmann; C. Buchheim; R. Goldhahn

Publisher

John Wiley and Sons; Wiley (John Wiley & Sons); Wiley - V C H Verlag GmbbH & Co.; Wiley (ISSN 1862-6351)

Published

2010

Language

EN

Field

Engineering (Physical Sciences)