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X-ray study of Si crystals irradiated by fast uranium ions by J. Auleytner; J. Bak-Misiuk; Z. Furmanik; M. Toulemonde; J. Vetter is a Physics and Astronomy article available to read on EtoBox.

What is X-ray study of Si crystals irradiated by fast uranium ions about?

Dislocation free Si crystals implanted with 16 MeV/n U-ions using Darmstadt accelerator have been investigated by X-ray diffraction methods. X-ray section topography showed that the induced damage range is a little larger than theoretically calculated U-ion range. The created defects cause the volume increase in the implanted part of the crystals. For the dose 1.9.1012 i/cm2 the increase of lattice constant is: 1.4"lO -5 \* 5"10 -6 ~ and for the dose 4.4.1012 2.4,10 -5 ± 5o10 -6 ~.

Who reads X-ray study of Si crystals irradiated by fast uranium ions?

Author

J. Auleytner; J. Bak-Misiuk; Z. Furmanik; M. Toulemonde; J. Vetter

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 1359-0189)

Published

1991

Language

EN

Field

Physics and Astronomy (Physical Sciences)