Opening book details…
About this scholarly article
2004 International Semiconductor Conference. CAS 2004 Proceedings (IEEE Cat. No.04TH8748) - Gate oxides on 4H-SiC substrates grown or annealed in N/sub 2/O/Ar mixture by Perez-Tomas, A.; Godignon, P.; Tournier, D.; Mestres, N.; Millan, J. is a scholarly article available to read on EtoBox.
- Author
- Perez-Tomas, A.; Godignon, P.; Tournier, D.; Mestres, N.; Millan, J.
- Publisher
- IEEE
- Published
- 2004
- Language
- EN
More by Perez-Tomas, A.; Godignon, P.; Tournier, D.; Mestres, N.; Millan, J.
Browse all works by Perez-Tomas, A.; Godignon, P.; Tournier, D.; Mestres, N.; Millan, J.