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What is P6010DTFG P-Channel MOSFET Specs about?

This document provides specifications for a P-channel enhancement mode MOSFET. Key specifications include a drain-source breakdown voltage of -100V, on-state resistance of 60mΩ at -10V gate-source voltage, and continuous drain current rating of -24A. The MOSFET package is a TO-220F and it has a thermal resistance of up to 2°C/W junction-to-case. Absolute maximum ratings and electrical characteristics are provided.

Author

Johnsan Drummer

Language

EN