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About this Engineering article
Non-one-dimensional effects in tunnel MOS devices by S.V. Belov; M.I. Vexler; I.V. Grekhov; A.F. Shulekin is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- S.V. Belov; M.I. Vexler; I.V. Grekhov; A.F. Shulekin
- Publisher
- Elsevier Science; Elsevier ; Elsevier Sequoia; Elsevier BV (ISSN 0040-6090)
- Published
- 1997
- Language
- EN
- Field
- Engineering (Physical Sciences)
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