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Preparation of sputter-deposited CuOx thin film with p-type conductivity and application as thin film transistor by So Jeong Park; Eui-Jung Yun is a Engineering article available to read on EtoBox.

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This paper explored the effect of deposition conditions on the characteristics of copper oxide (CuO x ) thin films prepared by direct current (DC) magnetron sputtering. X-ray diffraction exhibited that CuO with n-type conductivity was the main composition regardless of the DC magnetron sputtering power whereas the phase transition from n-type CuO to p-type Cu 2 O was observed with decreasing the oxygen pressure (OP) from 40 to 20%. The optical band gap ranges of 1.6-1.9 eV, which are characteristic of n-type CuO, were determined for samples prepared with OPs of 30-40% while the optical band gap of 2.3 eV, which is characteristic of p-type Cu 2 O, was measured for samples prepared with an OP of 20%. In addition, only Cu + X-ray photoelectron spectroscopy (XPS) peak at the ~932.6 eV position exists in the films deposited with an OP of 20%, whereas only Cu 2+ XPS peaks at ~934.2 eV and in the range of 940-945 eV are observed in the films deposited with an OP of 40%. Furthermore, as a result of XPS depth profile analysis, it was confirmed that the composition ratio of the sample prepared at an OP of 20% was Cu 2 O, whereas the composition ratio of the sample prepared at an OP of 40% wa

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Author

So Jeong Park; Eui-Jung Yun

Publisher

Springer Science and Business Media LLC

Published

2022

Language

EN

Field

Engineering (Physical Sciences)