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原子層沉積技術概述 by ICISTS KAIST is a document available to read on EtoBox.
Atomic Layer Deposition (ALD) is a modified chemical vapor deposition (CVD) process that alternates the injection of precursor and reactant gases to achieve uniform film deposition at the atomic level. The process involves a four-step cycle: precursor exposure, purge, reactant exposure, and another purge, ensuring surface self-limited reactions that minimize impurities and enhance film uniformity. ALD is particularly effective for thin films (less than 30 nm) and is widely used in semiconductor applications
- Author
- ICISTS KAIST
- Language
- EN