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What is Analytical Modeling of Double-Gate and about?

This article presents an analytical model for junctionless ion-sensitive field-effect transistors (ISFETs), specifically focusing on double-gate (DG) and nanowire (NW) configurations. The model integrates electrochemical interactions at the semiconductor-insulator interface and predicts device characteristics across various operational regions, validated by COMSOL Multiphysics simulations. The findings highlight the advantages of junctionless ISFETs for biosensing applications due to their high sensitivity

Author

bojnourdiau.shahrokh

Language

EN