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Highly spatially resolved electron energy‐loss spectroscopy in the bandgap regime of GaN by U. Bangert; A. J. Harvey; D. Freundt; R. Keyse is a Medicine article available to read on EtoBox.

What is Highly spatially resolved electron energy‐loss spectroscopy in the bandgap regime of GaN about?

The possibilities of obtaining information about interband scattering processes in the bandgap regime of GaN from electron energy‐loss spectra, taken in a dedicated scanning transmission electron microscope (STEM), are investigated. With the help of precise simulations of the zero‐loss peak it is feasable to process, extract and analyse data in the extreme low‐loss regime of a few electronvolts. The accuracy of the results is restricted predominantly by instrumental broadening functions. By modelling these accurately, it is possible to eliminate the effects of the tail of the zero‐loss peak and to extract the low‐loss spectrum together with the correct value for the bandgap of GaN. Furthermore, differences in the shapes of the low‐loss spectra can be revealed, depending on the microstructural features, probed at different beam locations.

Who reads Highly spatially resolved electron energy‐loss spectroscopy in the bandgap regime of GaN?

Author

U. Bangert; A. J. Harvey; D. Freundt; R. Keyse

Publisher

John Wiley and Sons; Wiley (Blackwell Publishing); Blackwell Publishing Inc.; Wiley-Blackwell Publishing Ltd; Wiley (ISSN 0022-2720)

Published

1997

Language

EN

Field

Medicine (Physical Sciences)