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Novel GaN GIT Gate Driving Technique Using Two-Step Turn-Off Fashion by Nosaka, Noriyuki ;Okada, Wataru ;Uematsu, Takeshi ;Zaitsu, Toshiyuki is a scholarly article available to read on EtoBox.

What is Novel GaN GIT Gate Driving Technique Using Two-Step Turn-Off Fashion about?

Recently, high-speed switching circuits using GaN devices have attracted attention for higher power density. Especially, GaN GIT devices have an ultra-fast speed capability but tend to cause false turn-on due to a lower threshold voltage. A simple negative gate bias method is usually used to prevent the false turn-on phenomenon. However, during the turn-off period, the spike gate voltage will exceed the rated voltage, which leads to fatal damage to GaN GIT devices. To solve this problem, we propose that the novel GaN GIT gate driving technique using a two-step turn-off fashion. It is possible to simultaneously satisfy the conflicting performance of low spike voltage and high-speed turn-off switching. This circuit was implemented on the board using the GaN GIT device and applied to a synchronous rectification type boost converter. It is confirmed experimentally that this driving technique is verified to be effective and useful.

Author

Nosaka, Noriyuki ;Okada, Wataru ;Uematsu, Takeshi ;Zaitsu, Toshiyuki

Publisher

IEEE

Published

2020

Language

EN