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IndiumTin-Oxide Transistors with One Nanometer Thick Channel and Ferroelectric Gating is a scholarly article available to read on EtoBox.
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- American Chemical Society (ACS)
IndiumTin-Oxide Transistors with One Nanometer Thick Channel and Ferroelectric Gating is a scholarly article available to read on EtoBox.
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Published by American Chemical Society (ACS).