About this Engineering article
Impact of Technology Scaling in sub-100 nm nMOSFETs on Total-Dose Radiation Response and Hot-Carrier Reliability by Arora, Rajan; Fleetwood, Zachary E.; Zhang, En Xia; Lourenco, Nelson E.; Cressler, John D.; Fleetwood, Daniel M.; Schrimpf, Ronald D.; Sutton, Akil K.; Freeman, Greg; Greene, Brian is a Engineering article available to read on EtoBox.
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- Author
- Arora, Rajan; Fleetwood, Zachary E.; Zhang, En Xia; Lourenco, Nelson E.; Cressler, John D.; Fleetwood, Daniel M.; Schrimpf, Ronald D.; Sutton, Akil K.; Freeman, Greg; Greene, Brian
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0018-9499)
- Published
- 2014
- Language
- EN
- Field
- Engineering (Physical Sciences)