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About this Materials Science article
Achieving homogeneity of InGaN/GaN quantum well by well/barrier interface treatment by Peng, Liyuan; Zhao, Degang; Zhu, Jianjun; Wang, Wenjie; Liang, Feng; Jiang, Desheng; Liu, Zongshun; Chen, Ping; Yang, Jing; Liu, Shuangtao; Xing, Yao; Zhang, Liqun is a Materials Science article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- Peng, Liyuan; Zhao, Degang; Zhu, Jianjun; Wang, Wenjie; Liang, Feng; Jiang, Desheng; Liu, Zongshun; Chen, Ping; Yang, Jing; Liu, Shuangtao; Xing, Yao; Zhang, Liqun
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0169-4332)
- Published
- 2020
- Language
- EN
- Field
- Materials Science (Physical Sciences)