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Simulation of Enhancement Mode GaN HEMTs with Threshold > 5 V using P-type Buffer by Bajaj, Sanyam; Akyol, Fatih; Krishnamoorthy, Sriram; Hung, Ting-Hsiang; Rajan, Siddharth is a scholarly article available to read on EtoBox.

What is Simulation of Enhancement Mode GaN HEMTs with Threshold > 5 V using P-type Buffer about?

A high threshold voltage enhancement-mode GaN HEMT with p-type doped buffer is discussed and simulated. Analytical expressions are derived to explain the role of buffer capacitance in designing and enhancing threshold voltage. Simulations of the proposed device with p-type buffer show threshold voltages above 5 V, and a positive shift in threshold voltage as the oxide capacitance is reduced, thus enabling threshold voltage tunability over an unprecedented range for GaN-based HEMTs. The electric field profiles, breakdown performance, on-resistance and delay tradeoffs in the proposed pGaN back HEMT device are also discussed.

Author

Bajaj, Sanyam; Akyol, Fatih; Krishnamoorthy, Sriram; Hung, Ting-Hsiang; Rajan, Siddharth

Published

2015

Language

EN