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About this Materials Science article
Dopant activation and strain relaxation in P-implanted metastable pseudomorphic Ge0.12Si0.88 grown on Si by D.Y.C. Lie; N.D. Theodore; J.H. Song is a Materials Science article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- D.Y.C. Lie; N.D. Theodore; J.H. Song
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0169-4332)
- Published
- 1996
- Language
- EN
- Field
- Materials Science (Physical Sciences)