Opening book details…
About this Engineering article
Threshold voltage control of InAlN/GaN heterostructure field-effect transistors for depletion- and enhancement-mode operation by S. Choi; H. J. Kim; Z. Lochner; Y. Zhang; Y. Lee; S. Shen; J. Ryou; R. D. Dupuis is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- S. Choi; H. J. Kim; Z. Lochner; Y. Zhang; Y. Lee; S. Shen; J. Ryou; R. D. Dupuis
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 2010
- Field
- Engineering (Physical Sciences)
More by S. Choi; H. J. Kim; Z. Lochner; Y. Zhang; Y. Lee; S. Shen; J. Ryou; R. D. Dupuis
Browse all works by S. Choi; H. J. Kim; Z. Lochner; Y. Zhang; Y. Lee; S. Shen; J. Ryou; R. D. Dupuis