About this scholarly article

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - InGaAs/AlAs/InGaAsP resonant tunneling bipolar transistors grown by chemical beam epitaxy by Chen, W.L.; Munns, G.O.; Knightly, D.; East, J.R.; Haddad, G.I. is a scholarly article available to read on EtoBox.

Author

Chen, W.L.; Munns, G.O.; Knightly, D.; East, J.R.; Haddad, G.I.

Publisher

IEEE

Published

1993