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About this Engineering article
Use of water vapor for suppressing the growth of unstable low-κ interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thickness by J.P. Xu; X. Zou; P.T. Lai; C.X. Li; C.L. Chan is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- J.P. Xu; X. Zou; P.T. Lai; C.X. Li; C.L. Chan
- Publisher
- Elsevier Science; Elsevier ; Elsevier Sequoia; Elsevier BV (ISSN 0040-6090)
- Published
- 2009
- Language
- EN
- Field
- Engineering (Physical Sciences)
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