About this scholarly article

2009 IEEE International Electron Devices Meeting (IEDM) - Dual metallic source and drain integration on planar Single and Double Gate SOI CMOS down to 20nm: Performance and scalability assessment by Hutin, L.; Vinet, M.; Poiroux, T.; Le Royer, C.; Previtali, B.; Vizioz, C.; Lafond, D.; Morand, Y.; Rivoire, M.; Nemouchi, F.; Carron, V.; Billon, T.; Deleonibus, S.; Faynot, O. is a scholarly article available to read on EtoBox.

Author

Hutin, L.; Vinet, M.; Poiroux, T.; Le Royer, C.; Previtali, B.; Vizioz, C.; Lafond, D.; Morand, Y.; Rivoire, M.; Nemouchi, F.; Carron, V.; Billon, T.; Deleonibus, S.; Faynot, O.

Publisher

IEEE

Published

2009