About this scholarly article

Proceedings of the Fifth IEEE International Caracas Conference on Devices, Circuits and Systems, 2004. - RF and noise properties of SOI MOSFETs, including the influence of a direct tunneling gate current (invited) by Danneville, F.; Iniguez, B.; Pailloncy, G.; Dambrine, G. is a scholarly article available to read on EtoBox.

Author

Danneville, F.; Iniguez, B.; Pailloncy, G.; Dambrine, G.

Publisher

IEEE

Published

2004