About this Engineering article
Characterization of single event effect simulation in InP-based High Electron Mobility Transistors by Sun, Shuxiang (author);Liu, Linshuang (author);Wu, Haitao (author);Yao, Ruxian (author);Mei, Hongying (author);Wen, Hua (author);Zhong, Yinghui (author) is a Engineering article available to read on EtoBox.
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- Author
- Sun, Shuxiang (author);Liu, Linshuang (author);Wu, Haitao (author);Yao, Ruxian (author);Mei, Hongying (author);Wen, Hua (author);Zhong, Yinghui (author)
- Publisher
- Elsevier BV
- Published
- 2022
- Field
- Engineering (Physical Sciences)