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This document provides specifications for an NPN silicon planar medium power Darlington transistor. Key details include: 1. It has a high hFE up to 5k and fast switching speeds with low VCE(sat) even at high collector currents. 2. Absolute maximum ratings include VCBO of 120V, VCEO of 100V, and VEBO of 10V. It has a continuous collector current rating of 500mA. 3. Electrical characteristics are provided for key parameters like breakdown voltages, saturation voltage, and gain over varying currents and te

Author

sooriyannair

Language

EN