Opening book details…
About this Engineering article
Behavior of Low-Frequency Noise in n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors for Different Impurity Concentrations by Hettiarachchi, Ranga; Matsuki, Takeo; Feng, Wei; Yamada, Keisaku; Ohmori, Kenji is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Hettiarachchi, Ranga; Matsuki, Takeo; Feng, Wei; Yamada, Keisaku; Ohmori, Kenji
- Publisher
- Institute of Pure and Applied Physics; Japan Society of Applied Physics; IOP Publishing (ISSN 0021-4922)
- Published
- 2011
- Language
- EN
- Field
- Engineering (Physical Sciences)
More by Hettiarachchi, Ranga; Matsuki, Takeo; Feng, Wei; Yamada, Keisaku; Ohmori, Kenji
Browse all works by Hettiarachchi, Ranga; Matsuki, Takeo; Feng, Wei; Yamada, Keisaku; Ohmori, Kenji