Skip to content

Opening book details…

About this Engineering article

Resonant Tunneling Behavior and Discrete Dopant Effects in Narrow Ultrashort Ballistic Silicon-on-insulator Metal-oxide-semiconductor Field-effect Transistors by M. J. Gilbert; D. K. Ferry is a Engineering article available to read on EtoBox.

It is typically read by researchers, students, and practitioners in Engineering.

Author
M. J. Gilbert; D. K. Ferry
Publisher
AVS (American Vacuum Society); American Vacuum Society; American Institute of Physics (ISSN 0734-211X)
Published
2004
Language
EN
Field
Engineering (Physical Sciences)

More by M. J. Gilbert; D. K. Ferry

Browse all works by M. J. Gilbert; D. K. Ferry