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Schottky-barrier thin-film transistors based on HfO2-capped InSe by Wang, Yiming; Zhang, Jiawei; Liang, Guangda; Shi, Yanpeng; Zhang, Yifei; Kudrynskyi, Zakhar R.; Kovalyuk, Zakhar D.; Patanè, Amalia; Xin, Qian; Song, Aimin is a Engineering article available to read on EtoBox.

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Author
Wang, Yiming; Zhang, Jiawei; Liang, Guangda; Shi, Yanpeng; Zhang, Yifei; Kudrynskyi, Zakhar R.; Kovalyuk, Zakhar D.; Patanè, Amalia; Xin, Qian; Song, Aimin
Publisher
American Institute of Physics; AIP Publishing (ISSN 0003-6951)
Published
2019
Field
Engineering (Physical Sciences)

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Browse all works by Wang, Yiming; Zhang, Jiawei; Liang, Guangda; Shi, Yanpeng; Zhang, Yifei; Kudrynskyi, Zakhar R.; Kovalyuk, Zakhar D.; Patanè, Amalia; Xin, Qian; Song, Aimin