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Si and Ga Doping Effects on BiSiGaVOx by zineblabrag071 is a document available to read on EtoBox.
The study investigates the structural and ionic conductivity effects of Si4+ and Ga3+ doping in the BiSiGaVOx system, specifically in the Bi4V2-xGax/2Six/2O11-3x/4 compound. Structural analysis reveals the presence of three polymorphs: α-monoclinic for low doping levels, β-orthorhombic for moderate levels, and γ-tetragonal for higher levels, with the highest conductivity observed at x = 0.2. The findings suggest that the dual substitution of silicon and gallium enhances the stability of the γ-phase and impr
- Author
- zineblabrag071
- Language
- EN