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This paper presents a thermal-first evaluation of SiC MOSFET and Si IGBT in a bidirectional non-isolated half-bridge DC–DC converter, emphasizing thermal limits over efficiency. It measures total loss from port powers and assesses how much heat loads the heatsink, revealing that reverse power flow is a thermal bottleneck for SiC devices. The findings suggest practical improvements for thermal management and introduce normalized metrics for fair comparison between device technologies.
- Author
- bnbnabc44
- Language
- EN