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Semi-transparent pentacene thin film transistors with NiOx electrode operating at low voltages by D.K. Hwang; Jeong-M. Choi; Kimoon Lee; Ji Hoon Park; Eugene Kim; Seongil Im is a Engineering article available to read on EtoBox.

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We demonstrate the fabrication of semi-transparent pentacene-based thin-film transistors (TFTs) with thin poly-4-vinylphenol (PVP)/high-k yttrium oxide (YO x ) double gate dielectric layers and also with thermally-evaporated NiO x source/drain (S/D) electrodes which show a transmittance of ∼30-40% and sheet resistance range of 100-200 Ω/□ (controlled by deposition rate). Our pentacene TFTs with PVP (45 nm)/ YO x (100 nm) layers operated at less than -5 V, exhibiting a decent saturation mobility (maximum 0.83 cm 2 /Vs) and on/off current ratios of 10 4 . When the sheet resistance of our semi-transparent NiO x electrode increased from 100 Ω/□ to 200 Ω/□, the field mobility of our TFT decreased but was found to be still effective as 0.32 cm 2 /Vs.

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Author

D.K. Hwang; Jeong-M. Choi; Kimoon Lee; Ji Hoon Park; Eugene Kim; Seongil Im

Publisher

Elsevier Science; Elsevier ; Elsevier Sequoia; Elsevier BV (ISSN 0040-6090)

Published

2008

Language

EN

Field

Engineering (Physical Sciences)