Can I read The formation of near surface SiGe layers with combined high-dose ion implantation and flash-lamp annealing on EtoBox?

The formation of near surface SiGe layers with combined high-dose ion implantation and flash-lamp annealing by Matthias Voelskow; Ioannis Stoimenos; Lars Rebohle; Wolfgang Skorupa is a Engineering article available to read on EtoBox.

What is The formation of near surface SiGe layers with combined high-dose ion implantation and flash-lamp annealing about?

## Abstract The formation of near surface SiGe layers by means of combined high dose Ge ion implantation and flash lamp annealing will be addressed. Furthermore, we show that the formation of an undesirable facetted liquid/solid interface, which is well known for pulse melting in the millisecond time regime, is less pronounced due to the decreasing melting temperature of Si with increasing Ge concentration at the SiGe/Si interface. A dislocation network, which is observed by using transmission electron microscopy, is expected to play an important role to form these thin SiGe layers. We will demonstrate the depth profiles of Ge by Rutherford backscattering spectrometry and discuss the concerned mechanism. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Who reads The formation of near surface SiGe layers with combined high-dose ion implantation and flash-lamp annealing?

Author

Matthias Voelskow; Ioannis Stoimenos; Lars Rebohle; Wolfgang Skorupa

Publisher

John Wiley and Sons; Wiley (John Wiley & Sons); Wiley - V C H Verlag GmbbH & Co.; Wiley (ISSN 1862-6351)

Published

2010

Language

EN

Field

Engineering (Physical Sciences)