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About this Engineering article
High-frequency AlGaN/GaN HFETs with f T/f max of 149/263 GHz for D-band PA applications by Guo, Hongyu; Feng, Zhihong; Lv, Yuanjie; Fang, Yulong; Song, Xubo is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Guo, Hongyu; Feng, Zhihong; Lv, Yuanjie; Fang, Yulong; Song, Xubo
- Publisher
- The Institution of Electrical Engineers; Institution of Electrical Engineers; Institute of Electrical Engineers; Institution of Engineering and Technology (IET) (ISSN 0013-5194)
- Published
- 2016
- Language
- EN
- Field
- Engineering (Physical Sciences)
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