About this scholarly article

1984 International Electron Devices Meeting - A fine-line CMOS technology that uses p+polysilicon/silicide gates for NMOS and PMOS devices by Parrillo, L.C.; Hillenius, S.J.; Field, R.L.; Hu, E.L.; Fichtner, W.; Chen, M.-L. is a scholarly article available to read on EtoBox.

Author

Parrillo, L.C.; Hillenius, S.J.; Field, R.L.; Hu, E.L.; Fichtner, W.; Chen, M.-L.

Publisher

IRE

Published

1984