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Improve photo-to-dark current ratio of p-Si/SiO2/n-Ga2O3 heterojunction solar-blind photodetector by inserting SiO2 barrier layer by Xu Yan; Xueqiang Ji; Jinjin Wang; Chao Lu; Zuyong Yan; Shengrun Hu; Sai Zhang; Peigang Li is a Engineering article available to read on EtoBox.

What is Improve photo-to-dark current ratio of p-Si/SiO2/n-Ga2O3 heterojunction solar-blind photodetector by inserting SiO2 barrier layer about?

In this study, the solar-blind ultraviolet photodetectors based on p-Si/Ga 2 O 3 and p-Si/SiO 2 /n-Ga 2 O 3 heterojunctions were fabricated by metalorganic chemical vapor deposition, respectively. Benefitting from the electron-blocking ability of SiO 2 dielectric layer insertion, p-Si/SiO 2 /n-Ga 2 O 3 photodetectors exhibit a very low dark current of 1.14 × 10 -12 A, which is 4 orders of magnitude lower than p-Si/Ga 2 O 3 photodetectors (3.22 × 10 -8 A). At the same time, a high photo-to-dark current ratio (1.81 × 10 5 ) of p-Si/SiO 2 /n-Ga 2 O 3 photodetectors was obtained under UV light (λ = 254 nm) at -15 V. Meanwhile, the p-Si/SiO 2 /n-Ga 2 O 3 devices express better photodetection performance, in which the responsivity and EQE are about two times more than that of p-Si/Ga 2 O 3 photodetectors. Furthermore, the photodetector was found to possess impressive photodetection stabilities. Our results indicate that the p-Si/SiO 2 /n-Ga 2 O 3 photodetector is an excellent candidate for high-sensitivity, ultrafast response solar-blind UV light detection.

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Author

Xu Yan; Xueqiang Ji; Jinjin Wang; Chao Lu; Zuyong Yan; Shengrun Hu; Sai Zhang; Peigang Li

Published

2022

Language

EN

Field

Engineering (Physical Sciences)