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About this Engineering article

Si Surface Passivation by Atomic Layer Deposited Al2O3 with In-Situ H2O Prepulse Treatment by Kim, Hogyoung; Choi, Byung Joon is a Engineering article available to read on EtoBox.

It is typically read by researchers, students, and practitioners in Engineering.

Author
Kim, Hogyoung; Choi, Byung Joon
Publisher
Springer-Verlag; The Korean Institute of Electrical and Electronic Material Engineers; Seoul: Korean Institute of Electrical and Electronic Material Engineers, 2009; Test accounts; Springer Science and Business Media LLC (ISSN 1229-7607)
Published
2019
Language
EN
Field
Engineering (Physical Sciences)