About this scholarly article

2019 Symposium on VLSI Technology - Channel Strain Dependence of Tinv in Strained Si and Si l-x Ge x FETs: Internal Strain-induced Modification of Chemical Oxidation by Lee, ChoongHyun; Mochizuki, Shogo; Miao, Xin; Li, Juntao; Southwick, Richard G. is a scholarly article available to read on EtoBox.

Author

Lee, ChoongHyun; Mochizuki, Shogo; Miao, Xin; Li, Juntao; Southwick, Richard G.

Publisher

IEEE

Published

2019