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Can I read Strain-induced Effects In Advanced Mosfets (computational Microelectronics) on EtoBox?

Strain-induced Effects In Advanced Mosfets (computational Microelectronics) by Viktor Sverdlov (auth.) is a nonfiction available to read on EtoBox.

What is Strain-induced Effects In Advanced Mosfets (computational Microelectronics) about?

Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given. Erscheinungsdatum: 24.11.2010

Who reads Strain-induced Effects In Advanced Mosfets (computational Microelectronics)?

It is typically read by self-directed learners exploring a subject in depth.

Common subject areas: history, science, philosophy, social sciences.

Author
Viktor Sverdlov (auth.)
Publisher
Springer-Verlag Wien
Published
2011
Language
EN
ISBN
9783709103814
Category
nonfiction
Subjects
Engineering, Music, Stem

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