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This document provides information on the BPW41N silicon PIN photodiode. It has a large active area of 7.5 mm2 and a wide viewing angle of ±65 degrees. It features a fast response time, low junction capacitance, and is suitable for detecting near infrared radiation between 870-1050 nm. Common applications of this photodiode include high speed photo detection.

Author

Marco Reis

Language

EN