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This document provides information on an insulated gate bipolar transistor (IGBT) with an ultrafast soft recovery diode. Some key features include low saturation voltage, 10 microsecond short circuit capability, and soft reverse recovery characteristics of the diode. The IGBT has applications in motor control and exhibits benchmark efficiency, rugged transient performance, and low electromagnetic interference. Ratings and characteristics including voltage, current, thermal resistance, and switching performa
- Author
- Wanderley Moreira
- Language
- EN