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About this Materials Science article
Properties of deep etched trenches in silicon: Role of the angular dependence of the sputtering yield and the etched species redeposition by G. Marcos; A. Rhallabi; P. Ranson is a Materials Science article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- G. Marcos; A. Rhallabi; P. Ranson
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0169-4332)
- Published
- 2008
- Language
- EN
- Field
- Materials Science (Physical Sciences)