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About this Engineering article
Dependence of ionization current on gate bias in GaAs MESFETs by Canali, C.; Neviani, A.; Tedesco, C.; Zanoni, E.; Centronio, A.; Lanzieri, C. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Canali, C.; Neviani, A.; Tedesco, C.; Zanoni, E.; Centronio, A.; Lanzieri, C.
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0018-9383)
- Published
- 1993
- Language
- EN
- Field
- Engineering (Physical Sciences)
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