About this document
High Voltage NPN Transistor Specifications by José Benavides is a document available to read on EtoBox.
The document provides specifications for a silicon NPN triple diffused planar transistor (2SC5071) suitable for high voltage and high speed switching applications. Key specs include: - An absolute maximum collector-base voltage of 500V and collector-emitter voltage of 400V. - A minimum breakdown voltage between collector and emitter of 400V when a collector current of 25mA is applied. - Electrical characteristics include a typical current gain between 10-30 when a collector current of 7A is applied.
- Author
- José Benavides
- Language
- EN