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Electrical Spin Driving by $G$-matrix Modulation in Spin-orbit Qubits by Crippa, Alessandro; Maurand, Romain; Bourdet, Léo; Kotekar-Patil, Dharmraj; Amisse, Anthony; Jehl, Xavier; Sanquer, Marc; Laviéville, Romain; Bohuslavskyi, Heorhii; Hutin, Louis; Barraud, Sylvain; Vinet, Maud; Niquet, Yann-Michel; De Franceschi, Silvano is a scholarly article available to read on EtoBox.

What is Electrical Spin Driving by $G$-matrix Modulation in Spin-orbit Qubits about?

In a semiconductor spin qubit with sizable spin-orbit coupling, coherent spin rotations can be driven by a resonant gate-voltage modulation. Recently, we have exploited this opportunity in the experimental demonstration of a hole spin qubit in a silicon device. Here we investigate the underlying physical mechanisms by measuring the full angular dependence of the Rabi frequency as well as the gate-voltage dependence and anisotropy of the hole $g$-factors. We show that a $g$-matrix formalism can simultaneously capture and discriminate the contributions of two mechanisms so far independently discussed in the literature: one associated with the modulation of the $g$ factors, and measurable by Zeeman energy spectroscopy, the other not. Our approach has a general validity and can be applied to the analysis of other types of spin-orbit qubits.

Author

Crippa, Alessandro; Maurand, Romain; Bourdet, Léo; Kotekar-Patil, Dharmraj; Amisse, Anthony; Jehl, Xavier; Sanquer, Marc; Laviéville, Romain; Bohuslavskyi, Heorhii; Hutin, Louis; Barraud, Sylvain; Vinet, Maud; Niquet, Yann-Michel; De Franceschi, Silvano

Published

2017

Language

EN