About this scholarly article

Digest. International Electron Devices Meeting, - Manufacturable embedded CMOS 6T-SRAM technology with high-k gate dielectric device for system-on-chip applications by Oh, C.B.; Kang, H.S.; Ryu, H.J.; Oh, M.H.; Jung, H.S.; Kim, Y.S.; He, J.H.; Lee, N.I.; Cho, K.H.; Lee, D.H.; Yang, T.H.; Cho, I.S.; Kang, H.K.; Kim, Y.W.; Suh, K.P. is a scholarly article available to read on EtoBox.

Author

Oh, C.B.; Kang, H.S.; Ryu, H.J.; Oh, M.H.; Jung, H.S.; Kim, Y.S.; He, J.H.; Lee, N.I.; Cho, K.H.; Lee, D.H.; Yang, T.H.; Cho, I.S.; Kang, H.K.; Kim, Y.W.; Suh, K.P.

Publisher

IEEE

Published

2002