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About this Engineering article
Conductive filament structure in HfO2 resistive switching memory devices by Privitera, S.; Bersuker, G.; Lombardo, S.; Bongiorno, C.; Gilmer, D.C. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Privitera, S.; Bersuker, G.; Lombardo, S.; Bongiorno, C.; Gilmer, D.C.
- Publisher
- Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0038-1101)
- Published
- 2015
- Field
- Engineering (Physical Sciences)
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