About this Materials Science article
Achieve high-quality InGaN/GaN multiple quantum wells on La0.3Sr1.7AlTaO6 substrates by Wang, Wenliang; Liu, Zuolian; Yang, Weijia; Lin, Yunhao; Zhou, Shizhong; Qian, Huirong; Li, Guoqiang is a Materials Science article available to read on EtoBox.
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- Author
- Wang, Wenliang; Liu, Zuolian; Yang, Weijia; Lin, Yunhao; Zhou, Shizhong; Qian, Huirong; Li, Guoqiang
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0167-577X)
- Published
- 2014
- Field
- Materials Science (Physical Sciences)