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What is High-Performance Ballistic InSe Transistors about?

This document summarizes research on a new type of transistor using indium selenide (InSe) as the channel material. Key points: 1) InSe transistors were able to operate at 0.5V and achieve a record high transconductance of 6 mS/μm and ballistic ratio of 83%, surpassing silicon transistors. 2) The InSe transistors were scaled down to a 10nm channel length while effectively suppressing short-channel effects. 3) Density functional theory calculations and transmission electron microscopy imaging confirmed

Author

Xingxia Sun

Language

EN