About this scholarly article

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - An analysis of the effect of hydrogen incorporation on electron traps in silicon nitride by Sonoda, Ken'ichiro; Tsukuda, Eiji; Tanizawa, Motoaki; Ishikawa, Kiyoshi; Yamaguchi, Yasuo is a scholarly article available to read on EtoBox.

Author

Sonoda, Ken'ichiro; Tsukuda, Eiji; Tanizawa, Motoaki; Ishikawa, Kiyoshi; Yamaguchi, Yasuo

Publisher

IEEE

Published

2014

Language

EN